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Intel Announces Its Next Generation Memory and Storage Products

detsember 24, 2020

Intel, SSD, CPU, OPTANE

Intel Announces Its Next Generation Memory and Storage Products

Intel announced six new memory and storage products to help customers meet the challenges of digital transformation. Key to advancing innovation across memory and storage, Intel announced two new additions to its Intel® Optane™ Solid State Drive (SSD) Series: the Intel® Optane™ SSD P5800X, the world’s fastest data center SSD, and the Intel® Optane™ Memory H20 for client, which features performance and mainstream productivity for gaming and content creation.

At Intel’s Memory and Storage 2020 event, the company highlighted six new memory and storage products to help customers meet the challenges of digital transformation. Key to advancing innovation across memory and storage, Intel announced two new additions to its Intel® Optane™ Solid State Drive (SSD) Series: the Intel® Optane™ SSD P5800X, the world’s fastest data center SSD, and the Intel® Optane™ Memory H20 for client, which features performance and mainstream productivity for gaming and content creation. Optane helps meet the needs of modern computing by bringing the memory closer to the CPU. The company also revealed its intent to deliver its 3rd generation of Intel® Optane™ persistent memory (code-named “Crow Pass”) for cloud and enterprise customers.

Intel also announced three new NAND SSDs featuring 144-layer cell memory: the Intel SSD 670p, the company’s next-gen144-layer quad-level-cell (QLC) 3D NAND SSD for mainstream computing; the Intel SSD D7-P5510, the world’s first-to-market 144-layer triple-level-cell NAND design; and the Intel SSD D5-P5316, a greater-density, higher-endurance SSD built around the industry’s first 144-layer QLC NAND.

Why Intel Optane Technology Matters

With today’s Intel Optane technology announcements, Intel continues to establish a new tier in the data center memory and storage pyramid, which combines the attributes of both DRAM and NAND. Intel Optane SSDs alleviate data supply bottlenecks and accelerate applications with fast caching and fast storage to increase scale-per-server and reduce transaction costs for latency-sensitive workloads.

Intel Optane persistent memory is Intel’s vision of a memory and storage solution that offers persistence, capacity, affordability, low latency and memory-like speed. With Intel Optane persistent memory, Intel has re-architected the memory and storage hierarchy allowing it to be used as a distinct capacity and performance tier for memory and storage. With this approach, it is possible to create a two-tiered memory architecture where DRAM is the performance tier and persistent memory is the capacity tier. In the case of storage, Optane persistent memory is used as the performance tier to the NAND capacity tier.

Intel Optane persistent memory is attached to the CPU via the double-data rate bus, enabling direct load-and-store access at DRAM speeds; non-volatile, it combines the best elements of memory and storage.

Intel will further strengthen and extend its unique memory and storage portfolio with its 3rd generation of Intel Optane persistent memory, code-named “Crow Pass” and with future Intel® Xeon® Scalable processors (code-named “Sapphire Rapids.”)

Three new NAND SSDs announced represent new milestones for establishing TLC and QLC as a mainstream technology for high-capacity drives. The Intel® 3D NAND SSD 670p is Intel’s next-gen 144-layer quad-level-cell (QLC) 3D NAND SSD for mainstream computing. The Intel SSD D7-P5510 is the world’s first-to-market 144-layer TLC NAND design and the Intel SSD D5-P5316 is built around the industry’s first 144-layer QLC NAND. Intel has been developing these technologies over the past decade.

Disclaimer: The information contained in each press release posted on this site was factually accurate on the date it was issued. While these press releases and other materials remain on the Company's website, the Company assumes no duty to update the information to reflect subsequent developments. Consequently, readers of the press releases and other materials should not rely upon the information as current or accurate after their issuance dates.